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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 7 1.4 MAX. 1500 800 16 40 125 5.0 1.8 UNIT V V A A W V A s Tmb 25 C IC = 7.0 A; IB = 1.17 A ICsat = 7.0 A; IB(end) = 1 A PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W C C average over any 20 ms period Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 35 MAX. 1.0 UNIT K/W K/W 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 7.5 V; IC = 0 A IB = 1 mA IC = 7.0 A; IB = 1.17 A IC = 7.0 A; IB = 1.17 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V MIN. 7.5 6 TYP. 14 17 9 MAX. 1.0 2.0 1.0 5.0 1.0 12.5 UNIT mA mA mA V V V Emitter cut-off current Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (82 kHz line deflection dynamic test circuit). Turn-off storage time Turn-off fall time CONDITIONS ICsat = 7.0 A; LC = 100 H; Cfb = 3 nF; VCC = 138 V; IB(end) = 1.0 A TYP. MAX. UNIT s s ts tf 1.4 0.06 1.8 0.1 TRANSISTOR IC DIODE ICsat ICsat 90 % t IC IB IBend t 3.5us 5us 12.2us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL + 150 v nominal adjust for ICsat VCEsat / V 10 Tj = 85 C Tj = 25 C BU2530/2AL Lc 1 IC/IB = 10 IBend LB T.U.T. Cfb IC/IB = 5 0.1 -VBB 0.01 0.1 1 10 IC / A 100 Fig.3. Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB hFE 100 VCE = 1 V BU2530/2AL VBEsat / V 1 IC = 9 A 0.9 BU2530/2AL Tj = 85 C Tj = 25 C 10 0.8 IC = 7 A 0.7 Tj = 85 C Tj = 25 C 1 0.01 0.1 1 10 IC / A 100 0.6 0 1 2 3 IB / A 4 Fig.4. High and low DC current gain. hFE = f (IC) VCE = 1 V Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC PD% Normalised Power Derating hFE 100 VCE = 5 V BU2530/2AL Tj = 85 C Tj = 25 C 120 110 100 90 80 70 60 50 40 30 20 10 10 1 0.01 0 0.1 1 10 IC / A 100 0 20 40 60 80 100 Tmb / C 120 140 Fig.5. High and low DC current gain. hFE = f (IC) VCE = 5 V Fig.8. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) September 1997 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL Zth / K/W 10 BU2530AL/32AL IC / A 40 BU2530/32AL 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 T P D tp D= tp T 30 Area where fails occur 20 10 t D=0 0.001 1.0E-06 1E-04 t/s 1E-02 1E+00 0 100 VCE / V 1000 1500 Fig.9. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VCC Fig.11. Reverse bias safe operating area. Tj Tjmax LC IBend VCL LB T.U.T. CFB -VBB Fig.10. Test Circuit RBSOA. VCC = 150 V; -VBB = 1 - 5 V; LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 H; CFB = 1 - 10 nF; IB(end) = 1.0 - 2.0 A September 1997 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL MECHANICAL DATA Dimensions in mm Net Mass: 9 g 20.5 max 3.1 3.5 6.0 4.0 25.5 26.5 10.0 3.0 1.5 seating plane 3.0 5.3 max 3.0 2.5 19.5 min 1.5 2.5 max 3.5 max 0.8 1.0 0.4 M 5.45 5.45 0.8 max 3.0 max Fig.12. SOT430; pin 2 connected to mounting base. September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100 |
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